A Quasi-Two-Dimensional Model for High-Power RF LDMOS Transistors

作者：Everett John P^*; Kearney Michael J; Rueda Hernan; Johnson Eric M; Aaen Peter H; Wood John; Snowden Christopher M

来源：IEEE Transactions on Electron Devices, 2011, 58(9): 3081-3088.

DOI：10.1109/TED.2011.2160546

• Field-effect transistor (FET)
• laterally diffused metal-oxide-semiconductor (LDMOS)
• quasi-2-D (Q2-D)
• transistor model

A new quasi-2-D model for laterally diffused metal-oxide-semiconductor radio-frequency power transistors is described in this paper. We model the intrinsic transistor as a series laterally diffused p-channel and n-type drift region network, where the regional boundary is treated as a reverse-biased p(+)-n diode. A single set of 1-D energy transport equations is solved across a 2-D cross section in a "current-driven" form, and specific device features are modeled without having to solve regional boundary node potentials using numerical iteration procedures within the model itself. This fast process-oriented nonlinear physical model is scalable over a wide range of device widths and accurately models direct-current and microwave characteristics.

• 出版日期2011-9