Black Phosphorus-Monolayer MoS2 van der Waals Heterojunction p-n Diode

作者：Deng, Yexin^*; Luo, Zhe; Conrad, Nathan J.; Liu, Han; Gong, Yongji; Najmaei, Sina; Ajayan, Pulickel M.; Lou, Jun; Xu, Xianfan; Ye, Peide D.

来源：ACS Nano, 2014, 8(8): 8292-8299.

DOI：10.1021/nn5027388

• black phosphorus
• phosphorene
• MoS2
• p-n diode
• van der Waals heterojunction
• photodetection
• solar cell

Phosphorene, a elemental 2D material, which is the monolayer of black phosphorus, has been mechanically exfoliated recently. In its bulk form, black phosphorus shows high carrier mobility (similar to 10000 cm(2)/V.s) and a similar to 0.3 eV direct band gap. Well-behaved p-type field-effect transistors with mobilities of up to 1000 cm(2)/V.s, as well as phototransistors, have been demonstrated on few-layer black phosphorus, showing its promise for electronics and optoelectronics applications due to its high hole mobility and thickness dependent direct band gap. However, p-n junctions, the basic building blocks of modem electronic and optoelectronic devices, have not yet been realized based on black phosphorus. In this paper, we demonstrate a gate-tunable p-n diode based on a p-type black phosphorus/n-type monolayer MoS2 van der Waals p-n heterojunction. Upon illumination, these ultrathin p-n diodes show a maximum photodetection responsivity of 418 mA/W at the wavelength of 633 nm and photovoltaic energy conversion with an external quantum efficiency of 0.3%. These p-n diodes show promise for broad-band photodetection and solar energy harvesting.

• 出版日期2014-8