A design analysis of a GaInP/GaInAs/GaAs-based 980 nm Al-free pump laser using self-consistent numerical simulation

作者：Nawaz M^*; Permthammasin K

来源：Semiconductor Science and Technology, 2001, 16(10): 877-884.

DOI：10.1088/0268-1242/16/10/311

A theoretical design evaluation of a GaAs/GaInAs/GaInP-based 980 nm pump laser is presented. Using self-consistent two-dimensional numerical simulation, the layer structure of the laser diodes is optimized. A ridge waveguide design with GaInAs/GaAs and GaInAs/GaInAsP waveguide regions has been simulated. Compared to multiple quantum wells, a single quantum well with a GaInAsP/GaAs barrier layer gives lower threshold current. Compared to GaInAs/GaAs, the GaInAs/GaInAsP waveguide region suffers from a larger spread in the threshold current due to non-uniformities in the carrier density with increasing quantum wells. The influence of the well and waveguide thickness, and ridge width on the threshold current, is studied. The simulations have resulted in characteristic temperatures of 160 and 360 K for the GaInAs/GaAs and GaInAs/GaInAsP structures, respectively.

• 出版日期2001-10