Asymmetric resistive switching processes in W:AlOx/WOy bilayer devices

作者：Wu Hua-Qiang^*; Wu Ming-Hao; Li Xin-Yi; Bai Yue; Deng Ning; Yu Zhi-Ping; Qian He

来源：Chinese Physics B, 2015, 24(5): 058501.

DOI：10.1088/1674-1056/24/5/058501

• RRAM
• tungsten oxide
• asymmetric resistive switching

Asymmetric resistive switching processes were observed in W:AlOx/WOy bilayer RRAM devices. During pulse programming measurements, the RESET speed is in the range of hundreds of microseconds under -1.1 V bias, while the SET speed is in the range of tens of nanoseconds under 1.2 V bias. Electrical measurements with different pulse conditions and different temperatures were carried out to understand these significant differences in switching time. A redox reaction model in the W:AlOx/WOy device structure is proposed to explain this switching time difference.

• 出版日期2015-5
• 单位清华大学