First-principles study of d0 ferromagnetism in alkali-metal doped GaN

作者：Zhang, Yong^*

来源：Japanese Journal of Applied Physics, 2016, 55(8): 080307.

DOI：10.7567/JJAP.55.080307

• SEMICONDUCTORS
• DEFECTS

The d(0) ferromagnetism in GaN has been studied based on density functional theory. Our results show that GaN with sufficient hole become spin-polarized. Alkali-metal doping can introduce holes in GaN. Among them, both of Li- and Na-doping induce ferromagnetism in GaN and Na-doped GaN behaves as half-metallic ferromagnet. Moreover, at a growth temperature of 2000 K under N-rich condition, both concentrations can exceed 18%, which is sufficient to produce detectable macroscopic magnetism in GaN. The Curie temperature of Li- and Na-doped GaN is estimated to be 304 and 740 K, respectively, which are well above room temperature.

• 出版日期2016-8
• 单位嘉兴学院