Minimization of wafer bowing in GaN-based vertical light-emitting diodes by selective area growth using metal-organic chemical vapor deposition

作者：Ryu Jae Hyoung; Chandramohan S; Kim Hee Yun; Kim Hyun Kyu; Kang Ji Hye; Hong Chang Hee^*; Cho Hyun Kyong; Song Hyun Don; Kwon Ho Ki

来源：Journal of Crystal Growth, 2011, 314(1): 66-70.

DOI：10.1016/j.jcrysgro.2010.10.104

• Selective epitaxy
• Metal-organic chemical vapor deposition
• Nitrides
• Semiconducting III-V materials
• Light-emitting diodes

The effect of selective area growth (SAG) on wafer bowing of GaN-based light-emitting diodes (LEDs) is investigated. The SAG of LED structures was carried out on a silicon dioxide (SiO(2)) mask pattern with periodic 1000 x 1000 mu m openings, along the sapphire < 1-1 0 0 > and <-1 -1 20 > directions. The morphology of a selectively-grown n-GaN epilayer was examined in relation to various growth parameters such as temperature, pressure, and V/III ratio. Under optimized growth conditions, formation of a ridge-shaped epilayer with a v-pit free smooth surface was realized. Furthermore, the ridge-shaped vertical LED structure, after the removal of the sapphire substrate by laser lift-off (LLO) showed less wafer bowing compared with conventional vertical LED structures. This is attributed to the suppression of lateral strain and dislocations during the site-selective growth process, due to a reduction in the lateral dimensions.

• 出版日期2011-1-1