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摘要
This paper derives an improved analytical model to estimate switching loss and analyze the effects of parasitic elements on the switching performance of SiC MOSFETs. The proposed analytical model considers the parasitic inductances, the nonlinearity of the junction capacitances and the nonlinearity of the trans-conductance. The turn-on process and the turn-off process are illustrated in detail, and equivalent circuits are derived and solved for each switching transition. The proposed analytical model is more accurate and matches better with experimental results than other analytical models. Note that switching losses calculated based on experiments are imprecise, because the energy of the junction capacitances is not properly disposed Finally, the proposed analytical model is utilized to account for the effects of parasitic elements on the switching performance of a SiC MOSFET, and the circuit design rules for high frequency circuits are given.
- 出版日期2016-1
- 单位北京交通大学
