Nitride-based MQW LEDs with multiple GaN-SiN nucleation layers

作者：Wei SC^*; Su YK; Chang SJ; Chen SM; Li WL

来源：IEEE Transactions on Electron Devices, 2005, 52(6): 1104-1109.

DOI：10.1109/TED.2005.848085

• electrostatic discharge (ESD)
• GaN
• light emitting diodes (LEDs)
• multiple GaN-SiN nucleation layers

Nitride-based light emitting diodes (LEDs) separately prepared with a conventional single low-temperature (LT) GaN nucleation layer and multiple GaN-SiN nucleation layers were both prepared. It was found that we could reduce defect density and thus improve crystal quality of the GaN-based LEDs by using multiple GaN-SiN nucleation layers. With a 20-V applied reverse bias, it was found that the reverse leakage currents measured from the LED with a single LT GaN nucleation layer and the one with 10-pair GaN-SiN nucleation layers were 1.5 X 10(-4) and 2.5 X 10(-6) A, respectively. It was also determined that we could use the multiple GaN-SiN nucleation layers to enhance the output intensity of near ultraviolet (UV) LEDs and to improve the reliability of nitride-based LEDs.

• 出版日期2005-6