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摘要
This paper describes a novel high-precision bandgap reference with resistance variation compensated. Novel process-compensated emitter current generator allows a substantial reduction on V-BE variation, resulting in an improved accuracy of the proposed bandgap reference. Comparison results in a 0.13 mu m CMOS technology indicated that the proposed voltage reference achieved up to 62% improvement in terms of accuracy, as compared to conventional bandgap reference. Process variation of reference voltage is shown to be +/- 3.67 mV for all process corners without any post-process trimming.
- 出版日期2011-10-10
