科研之友
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摘要
Transparent, all-solution processed quantum-dot light-emitting diodes (QD-LEDs) are developed in this work. Indium-tin-oxide (ITO) fabricated by sputtering is adopted as transparent electrodes for the QD-LEDs. To reduce the plasma damage caused by sputtering, ZnO nanocrystals with a thickness of 82 nm are employed as the buffer layer and the electron transport layer. As a result, damage-free QD-LEDs are demonstrated with a high averaged transparency of 70%. The transparent QD-LEDs exhibit an external quantum efficiency of 5% (current efficiency of 7 cd A(-1)), which is comparable to that of the devices with conventional Al electrodes.
- 出版日期2016
- 单位南方科技大学
