An Enhanced Photoelectric Conversion Efficiency of n-Type Crystalline Silicon p-n Junctions Using a Ferroelectric Passivation Layer

作者：Li Zi-Zhen; Tang Rong-Sheng; Wang Xiao-Feng; Zheng Fen-Gang^*

来源：Chinese Physics Letters, 2014, 31(4): 047701.

DOI：10.1088/0256-307X/31/4/047701

• SOLAR-CELLS
• PHOTOCURRENT
• SURFACE
• BIFEO3
• FILMS
• SI

A multilayered structure consisting of ferroelectric Pb(Zr, Ti)O-3 (PZT) film is deposited by sputtering on the crystalline silicon p-n junction without any buffer layer. The photovoltaic output of the p-n junction is greatly enhanced due to the usage of In2O3:Sn(ITO)/PZT as top surface passivation layers. The short circuit current and photoelectric conversion efficiency of the p-n junction with ITO/PZT ferroelectric films increase about four and six times, respectively, compared with those without any passivation layers. Improvement in the passivated device is mainly attributed to the built-in field at the ITO/PZT interface.

• 出版日期2014-4
• 单位苏州大学