A planar Al-Si Schottky barrier metal-oxide-semiconductor field effect transistor operated at cryogenic temperatures

作者：Purches W E; Rossi A; Zhao R; Kafanov S; Duty T L; Dzurak A S; Rogge S; Tettamanzi G C^*

来源：Applied Physics Letters, 2015, 107(6): 063503.

DOI：10.1063/1.4928589

Schottky Barrier-MOSFET technology offers intriguing possibilities for cryogenic nano-scale devices, such as Si quantum devices and superconducting devices. We present experimental results on a device architecture where the gate electrode is self-aligned with the device channel and overlaps the source and drain electrodes. This facilitates a sub-5 nm gap between the source/drain and channel, and no spacers are required. At cryogenic temperatures, such devices function as p-MOS Tunnel FETs, as determined by the Schottky barrier at the Al-Si interface, and as a further advantage, fabrication processes are compatible with both CMOS and superconducting logic technology.

• 出版日期2015-8-10