A comparative Raman spectroscopy study on silicon surface in HF, HF/H2O2 and HF/NH4F aqueous solutions

作者：Wang J^*; Tu HL; Zhu WX; Zhou QG; Liu AS; Zhang C

来源：Materials Science and Engineering B-Solid State Materials for Advanced Technology, 2000, 72(2-3): 193-196.

DOI：10.1016/S0921-5107(99)00512-7

• Raman spectroscopy
• silicon
• chemical cleaning
• confocal

The nature of Si(100) surfaces during immersion in dilute hydrofluoric acids (DHF), HF/H2O/H2O mixture and buffered hydrofluoric acids (BHF) has been comparatively investigated using confocal Raman spectroscopy. In DHF solution, silicon surfaces are covered mainly with silicon trihydrides (Si-H-3) at the beginning of etching. As the etching goes on, silicon dihydrides (Si-H-2) become main surface bonds, and silicon monohydride (Si-H) signal appears clearly. In HF/H2O2/H2O solution, silicon surfaces are terminated with hydrides, oxides and hydrogen-associated silicon fluorides. In BHF solution, silicon surfaces are covered with hydrides and hydrogen-associated silicon fluorides.

• 出版日期2000-3-15
• 单位北京有色金属研究总院