HfSiO Bulk Trap Density Controls the Initial V-th in nMOSFETs

作者：Sahhaf Sahar^*; Degraeve Robin; Srividya V; De Brabanter Kris; Schram Tom; Gilbert M; Vandervorst Wilfried; Groeseneken Guido

来源：IEEE Transactions on Device and Materials Reliability, 2012, 12(2): 323-334.

DOI：10.1109/TDMR.2012.2182997

• HfSiO bulk defect density
• initial V-th
• reliability
• V-fb

The underlying physical mechanism of the V-th adjustment of nMOSFETs with HfSiO/TiN gate stack obtained by As and Ar implantation is investigated. It is experimentally proved that the trapped charge in the HfSiO bulk defects controls the initial V-th value in nMOSFETs. The reduction of the charged trap density in HfSiO by implant explains the tuned V-th values.

• 出版日期2012-6