摘要

Controlling magnetism with an electric field is fundamentally important and bears the potential for a wide range of applications. A promising route to circumvent this problem is the appropriately synthesized composite ferroelectric(FE)/ferromagnetic(FM) nano and multilayer structures that may serve as elements in quantitatively new multiferroic devices at room temperature. Two mechanisms, which may underlay the magnetoelectric effect in composite FE/FM junctions, interfacial charge rearrangements and strain effects, are studied as the key ingredients for the magnetoelectric coupling. We demonstrate theoretically a mutual multiferroic response and a complete magnetization switching of a thin FE/FM chain in the presence of a fast oscillating electric field.