Molecular beam epitaxy growth of monolayer niobium diselenide flakes

作者：Hotta Takato; Tokuda Takuto; Zhao Sihan; Watanabe Kenji; Taniguchi Takashi; Shinohara Hisanori^*; Kitaura Ryo^*

来源：Applied Physics Letters, 2016, 109(13): 133101.

DOI：10.1063/1.4963178

Monolayer niobium diselenide (NbSe2) is prepared through molecular beam epitaxy with hexagonal boron nitride (hBN) as substrates. Atomic force microscopy and the Raman spectroscopy have shown that the monolayer NbSe2 grown on the hBN possesses triangular or truncated triangular shape whose lateral size amounts up to several hundreds of nanometers. We have found that the precisely controlled supply rate and ultraflat surface of hBN plays an important role in the growth of the monolayer NbSe2. Published by AIP Publishing.

• 出版日期2016-9-26