摘要
A dual power supply ultra low-power 1 kbits EEPROM for passive UHF RFID is presented. The read power source is 1 V, while the write power source is 1.65 V, which is only activated in the write mode. To reduce the power of the read circuit without impacting the performance, a pre-charge scheme, a feedback scheme and a self-detect circuit, combined with a special read time sequence are adopted. A time-divided charge pump is proposed to reduce the current surge of the charge pump at the startup phase. The EEPROM IP has been fabricated in a SMIC 0.18 mu m 2P4M EEPROM process. The die size of the proposed EEPROM IP is 0.12 mm(2). The read and write currents of the EEPROM IP are 1.18 mu A and 33 mu A respectively. Under a 110 degrees temperature variation, the power variation of the read operation is 15%. The EEPROMIP is then verified in a full UHF RFID chip. Tested by a commercial reader at 4 W EIRP, the maximum read and write communication ranges are 6 m and 3 m respectively. The measured voltage drop of the output of rectifier Vrect caused by the current surge of the charge pump is smaller than 50 mV.
- 出版日期2013-8
- 单位西安电子科技大学