Multiwavelength, Sub-Nanosecond Yb:YAG/Cr4+:YAG/YVO4 Passively Q-Switched Raman Microchip Laser

作者：Wang, Xiao-Lei; Wang, Xiao-Jie; Dong, Jun^*

来源：IEEE Journal of Selected Topics in Quantum Electronics, 2018, 24(5): 1400108.

DOI：10.1109/JSTQE.2018.2792845

• Laser-diode pumped
• microchip lasers
• passively Q-switched
• Raman lasers
• Yb:YAG

We have demonstrated a multiwavelength, subnanosecond Yb:YAG/Cr4+:YAG/YVO4 passively Q-switched Raman microchip laser (PQSRML) emitting at 1-1.26 mu m. Multiple wavelength Stokes laser radiations at 1123, 1134, 1260 nm and 1079, 1134, 1157, 1260 nm have been obtained at different pump power levels, respectively. The second-order Stokes laser at 1.26 mu m increases rapidly with the pump power and becomes the dominant component in the laser emitting spectrum. The maximum average output powerof 135.4 m W is achieved at the absorbed pump power of 2.64 W, meanwhile, the pulse duration is 440 ps, and the peak power is 9.2 kW for the Raman laser. The repetition rate of 20.3 kHz has been achieved. The multi-wavelength, sub-nanosecond lasers at 1-1.26 mu m with adjustable frequency separation depending on pump power have potential applications in terahertz wave generation, photodynamic therapy, and generating red laser.

• 出版日期2018-9
• 单位厦门大学