A Fast I-V Screening Measurement for TDDB Assessment of Ultra-Thick Inter-Metal Dielectrics

作者：Khorasani Arash Elhami^*; Griswold Mark; Alford T L

来源：IEEE Electron Device Letters, 2014, 35(1): 117-119.

DOI：10.1109/LED.2013.2290538

• Time-dependent dielectric breakdown (TDDB)
• V-ramp
• semiconductor device measurements
• oxide reliability

Semiconductor manufacturing economics necessitate the development of novel and innovative techniques that can replace the traditional time consuming reliability methods, i.e., the constant voltage stress time-dependent dielectric breakdown (CVS-TDDB) tests. We show that positive charge trapping is a dominant process when ultra-thick oxides are stressed through the ramped voltage test. Exploiting the physics behind positive charge generation/trapping at high electric fields, a fast I-V measurement technique is proposed that can be used to effectively distinguish the ultra-thick oxides' intrinsic quality at low electric fields. It will be demonstrated, based on experimental data, that our proposed technique can be a suitable replacement for the CVS-TDDB as a quality screening tool.

• 出版日期2014-1