摘要

Dense vertical arrays of indium doped ZnO nanoplates have been grown by thermal treatment of compacted ZnS-In2O3 powders with 0.35 at% of In. The distribution of nanoplates is related to the grain structure of the substrate. Only a small content of In has been detected in the plates by energy dispersive X-ray spectroscopy, but comparison with previous works shows that its presence in the precursor determines the growth of the nanoplates. Increase in the amount of In in the precursor leads to the growth of long indium doped ZnO nanobelts. Cathodoluminescence spectra of the nanobelts show a 23 meV blue shift of the band edge emission.

  • 出版日期2010-10-15