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摘要
Different from the conventional current-voltage and capacitance-voltage methods, Schottky contact barrier height extraction by admittance measurement is proposed and discussed in this paper. In this method, the barrier height can be simply extracted from the difference between the measured admittance at zero bias and a reasonably high forward bias. Both simulation results and experimental data demonstrate that the proposed method is effective not only for extraction of Schottky contacts with higher barrier heights (> 0.4 eV) but also for extraction of those with moderately lower barrier heights (0.2-0.4 eV).
- 出版日期2007-3-1
- 单位复旦大学
