科研之友
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摘要
We studied GaN nanorods grown by hydride vapour phase epitaxy processes to identify optimal growth conditions that yield nanorods appropriate for use in nanodevices. The growth temperature was varied over the range 625-670 degrees C, and the morphology of the samples changed with increasing growth temperature. GaN nanorods formed at growth temperatures of 645 degrees C on a Si(111) substrate. At a fixed growth temperature of 645 degrees C, the HCl:NH3 gas flow ratio was adjusted from 1:37 to 1:41. GaN nanorods with a small diameter of 26 nm formed at a HCl:NH3 ratio of 1:38. Individual GaN nanorods clearly grew along the axial direction, perpendicular to the substrate. Cathodoluminescence measurements at room temperature revealed a red shift as the acceleration energy was increased to 15 keV, possibly associated with the internal electric field.
- 出版日期2012-1
