Memory effects in MIS structures based on silicon and polymethylmethacrylate with nanoparticle charge-storage elements

作者：Mabrook M F^*; Jombert A S; Machin S E; Pearson C; Kolb D; Coleman K S; Zeze D A; Petty M C

来源：Materials Science and Engineering B-Solid State Materials for Advanced Technology, 2009, 159-60: 14-17.

DOI：10.1016/j.mseb.2008.09.003

• Cold nanoparticles
• C-60
• Carbon nanotubes
• PMMA
• Memory devices

We report on the electrical behaviour of metal-insulator-semiconductor (MIS) structures fabricated on p-type silicon substrates and using polymethylmethacrylate (PMMA) as the dielectric. Gold nanoparticles, single-wall carbon nanotubes and C-60, deposited at room temperature, were used as charge-storage elements. In all cases, the MIS devices containing the nanoparticles exhibited hysteresis in their capacitance versus voltage characteristics, with a memory window depending on the range of the voltage sweep. This hysteresis was attributed to the charging and discharging of the nanoparticles from the gate electrode. A relatively large memory window of about 2.2 V was achieved by scanning the applied voltage of an AI/PMMA/C-60/SiO2/Si structure between 4 and -4V. Gold nanoparticle-based memory devices produced the best charge retention behaviour compared to the other MIS structures investigated.

• 出版日期2009-3-15