Ultraviolet responses of a heterojunction Si quantum dot solar cell

作者：Lee Seong Hyun; Kwak Gyea Young; Hong Songwoung; Kim Chanhong; Kim Sung; Kim Ansoon; Kim Kyung Joong^*

来源：Nanotechnology, 2017, 28(3): 035402.

DOI：10.1088/1361-6528/28/3/035402

• Silicon quantum dot
• solar cell
• ultraviolet
• spectral response

We investigated the ultraviolet (UV) responses of a heterojunction Si quantum dot (QD) solar cell consisting of p-type Si-QDs fabricated on a n-type crystalline Si (p-Si-QD/n-c-Si HJSC). The UV responses were compared with a conventional n-type crystalline Si solar cell (n-c-Si SC). The external and internal quantum efficiency results of the p-Si-QD/n-c-Si HJSC exhibited a clear enhancement in the UV responses (300-400 nm), which was not observed in the n-c-Si SC. Based on the results of the cell reflectance and bias-dependent responses, we expect that almost all UV responses occur in the p-Si-QD layer, and the generated carriers can be transported via the Si-QD layer due to the formation of a sufficient electric filed. As a result, a high power conversion efficiency of 14.5% was achieved from the p-Si-QD/n-c-Si HJSC. By reducing the thickness of the n-Si substrate from 650 mu m to 300 mu m, more enhanced power conversion efficiency of 14.8% was obtained which is the highest value among the reported Si-QD based solar cells to date.

• 出版日期2017-1-20