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摘要
Two GaN p-(i)-n diodes were designed and fabricated, and their electrical performances with Ni-63 and Pm-147 plate sources were compared. The results showed that the diodes with Pm-147 had better electrical performances, with a short-circuit current (I-sc) of 59 nA, an open-circuit voltage (V-oc) of 1.4 V, and a maximum power (P-max) of 49.4 nw. The ways to improve the electrical performances are discussed, including appropriate increase of the i-GaN thickness.
- 出版日期2014-4
- 单位中国工程物理研究院; 中国工程物理研究院核物理与化学研究所
