A high-temperature oxidation-resistant diffusion barrier for PbZrxTi1-xO3 coating on nanocrystalline diamond film

作者：Park Jong Keuk^*; Yoon Ju Heon; Lee Hak Joo; Jeong Jeung hyun; Baik Young Joon; Lee Wook Seong

来源：Applied Surface Science, 2014, 313: 577-580.

DOI：10.1016/j.apsusc.2014.06.025

• Nanocrystalline diamond films
• Piezoelectric ceramic film
• Multilayer thin films
• Oxygen diffusion barrier
• Adhesion

A buffer layer for PbZrxTi1-xO3 (PZT) coating on nanocrystalline diamond (NCD) film was investigated to prevent the oxidation damage of NCD layer during ambient air annealing at high-temperature. As for the phase of buffer layer, metal nitride is more effective than pure metal for enhancing adhesion of PZT coating on NCD film. For the metal nitride-based buffer layer, the incorporation of Al and Si increases further the adhesive strength of Pit coating on NCD film. As a microstructural point of view, nanoscale multilayered structure was observed to contribute to the increase of adhesive strength between PZT and NCD. As a consequence, introducing thin (similar to 70 nm) composite buffer composed of Ti(Al)N/SiNx nanoscale multilayer with bilayer period of similar to 5 nm as an intermediate layer between PZT coating and NCD film improved the high-temperature oxidation resistance of the NCD film and relevant adhesive strength of PZT coating even after the 900 degrees C air-annealing. The improved adhesion was attributed to the suppressed oxygen diffusion to the NCD film through the PZT layer at high temperature by the intervening nanoscale multilayer buffer.

• 出版日期2014-9-15