Direct photo-patternable, low-temperature processable polyimide gate insulator for pentacene thin-film transistors

作者：Jang Kwang Suk^*; Suk Hye Jung; Kim Won Soo; Ahn Taek; Ka Jae Won; Kim Jinsoo; Yi Mi Hye

来源：Organic Electronics, 2012, 13(9): 1665-1670.

DOI：10.1016/j.orgel.2012.05.024

• Gate insulator
• Polyimide
• Photo-patternability
• Organic thin-film transistor

We have developed photo-sensitive, low-temperature processable, soluble polyimide (PSPI) gate insulator with excellent resistance to the photo-patterning process. The PSPI was synthesized through one-step condensation polymerization of monomers 5-(2,5-dioxytetrahydrofuryl)- 3-methyl-3-cyclohexene-1,2-dicarboxylic anhydride (DOCDA) and 3,5-diaminobenzyl cinnamate (DABC). PSPI thin film, fabricated at 160 degrees C, has a dielectric constant of 3.3 at 10 kHz, and leakage current density of < 1.7 x 10 (10) A/cm(2), while biased from 0 to 100 V. PSPI could be easily patterned by selective UV-light exposure and dipping into gamma-butyrolactone. To investigate the potential of the polyimide as the photo-patternable gate insulator, we fabricated pentacene OTFTs and confirmed the PSPI's resistance to the photo-patterning process. The photo-patternable polyimide shows promise as gate dielectrics for OTFTs.

• 出版日期2012-9