Emergence of pressure-induced metamagnetic-like state in Mn-doped CdGeAs2 chalcopyrite

作者：Arslanov T R^*; Mollaev A Yu; Kamilov I K; Arslanov R K; Kilanski L; Trukhan V M; Chatterji T; Marenkin S F; Fedorchenko I V

来源：Applied Physics Letters, 2013, 103(19): 192403.

DOI：10.1063/1.4829746

The effect of hydrostatic pressure on resistivity and magnetic ac susceptibility has been studied in Mn-doped CdGeAs2 room-temperature (RT) ferromagnetic chalcopyrite with two types of MnAs micro-clusters. The slight increase of temperature by about 30K in the region between RT and Curie temperature T-C causes a significant change in the positions of pressure-induced semiconductor-metal transition and magnetic phase transitions in low pressure area. By conducting measurements of the anomalous Hall resistance in the field H <= 5 kOe, we present experimental evidence for pressure-induced metamagnetic-like state during the paramagnetic phase at pressure P approximate to 5 GPa.

• 出版日期2013-11-4