Al0.2Ga0.3In0.5P/Al0.1Ga0.4In0.5P/InGaP/GaAs Triple Heterostructure-Emitter Bipolar Transistor

作者：Tsai Jung Hui^*

来源：Science of Advanced Materials, 2016, 8(2): 421-424.

DOI：10.1166/sam.2016.2532

• Heterostructure-Emitter
• Bipolar Transistor
• AlGaInP/InGaP/GaAs
• Offset Voltage
• Current Gain

A heterostructure-emitter bipolar transistor with Al0.2Ga03In0.5P/Al0.1Ga0.4In0.5P/InGaP/GaAs triple heterostructure emitter is demonstrated by experimental results. The employment of a thin n-GaAs emitter layer at base emitter junction effectively decreases the potential spike at base-emitter and the collector-emitter offset voltage for low power consumption in circuit applications. While, the Al0.2Ga03In0.5P/Al0.1Ga0.4In0.5P/InGaP/GaAs triple heterostructure emitter is used to promote the hole confinement effect and current gain. Experimentally, the studied device exhibits a maximum current gain of 416 and a relatively low offset voltage of about 50 mV. Furthermore, a large current gain than 158 is achieved when the collector current is above 1.0 mA.

• 出版日期2016-2