A physically-based threshold voltage definition, extraction and analytical model for junctionless nanowire transistors

作者：Trevisoli Renan Doria^*; Doria Rodrigo Trevisoli; de Souza Michelly; Pavanello Marcelo Antonio

来源：Solid-State Electronics, 2013, 90: 12-17.

DOI：10.1016/j.sse.2013.02.059

• Junctionless nanowire transistors
• Threshold voltage
• Analytical model
• Parameter extraction

This work proposes a physically-based definition for the threshold voltage, V-TH, of junctionless nanowire transistors and a methodology to extract it. The V-TH is defined as the point of equal magnitude for the drift and diffusion components of the drain current. The methodology for V-TH extraction uses the device trans-conductance over drain current ratio characteristics. An analytical model for the threshold voltage based on the same definition has also been developed. Both V-TH extraction method and model have been validated through 3D simulations and have been applied to experimental devices. The proposed method has shown to provide a correct dependence on the temperature, while the double derivative of the drain current method overestimates this variation.

• 出版日期2013-12