Mid-infrared surface plasmon resonance in zinc oxide semiconductor thin films

作者：Sachet Edward^*; Losego Mark D; Guske Joshua; Franzen Stefan; Maria Jon Paul

来源：Applied Physics Letters, 2013, 102(5): 051111.

DOI：10.1063/1.4791700

Surface plasmon resonance (SPR) in semiconducting materials at mid-infrared (mid-IR) energies offers the potential for new plasmonic functionalities and integration schemes. Mainstream semiconductors are transparent to mid-IR energies, thus a tightly integrated monolithic package for SPR sensing becomes feasible. We report mid-IR surface plasmon resonance in zinc oxide as a model material for semiconductors with 4 x 10(19) to 8 x 10(19) cm(-3) carriers. The surface plasmon modes were characterized using spectroscopic IR-ellipsometry and compared to a reflectivity simulation. The data confirm the feasibility of mid-IR SPR, show a generic ability for plasmon tuning, and demonstrate the predictive power of the reflectivity model.

• 出版日期2013-2-4