Low voltage resistive switching devices based on chemically produced silicon oxide

作者：Li, Can^*; Jiang, Hao; Xia, Qiangfei

来源：Applied Physics Letters, 2013, 103(6): 062104.

DOI：10.1063/1.4817970

• HYDROGEN-BONDS
• MECHANISM
• MEMORIES

We developed nonvolatile metal/SiOx/Si memristive devices based on ultrathin (similar to 1 nm) silicon oxide that was produced in a Piranha solution. The devices exhibited repeatable resistive switching behavior with low programming voltages (as low as 0.5 V) and high ON/OFF conductance ratio. Devices with active metals as top electrodes were bipolar switches, while those with inert metal electrodes were unipolar. We also studied the switching mechanisms for both types of devices based on the filament formation and rupture, and proposed conduction models for Pt/SiOx/Si devices.

• 出版日期2013-8-5