An efficient solution-processed hole injection layer with phosphomolybdic acid in quantum dot light-emitting diodes

作者：Dong, Dan; Lian, Lu; Wang, Han; He, Gufeng^*

来源：Organic Electronics, 2018, 62: 320-326.

DOI：10.1016/j.orgel.2018.08.026

• Phosphomolybdic acid
• Hole injection
• Annealing temperature
• Annealing atmosphere

We have successfully employed solution-processed phosphomolybdic acid (PMA) as an efficient hole injection layer (HIL) in quantum dot light-emitting diodes. With its low price, simple solution processing, good physical and optical properties, PMA is a good candidate as a HIL in optoelectronic devices. Compared to the device with widely used Poly(3,4-ethylenedioxyth-iophene):poly(styrene-sulfonate) (PEDOT:PSS) as a HIL, the PMA-based device possesses much higher current density and lower driving voltages, demonstrating a superior hole injection ability. Besides, the annealing temperature and atmosphere have strong influences on Mo6+/Mo5+ ratio and work function of PMA film, resulting in different hole injection property. Consequently, with the optimized PMA as a HIL, the device obtains a dramatically lower turn-on voltage of 2.7 V, along with a 65.4% improvement on maximum power efficiency compared to that with PEDOT:PSS.

• 出版日期2018-11
• 单位上海交通大学