ANN based CMOS ASIC design for improved temperature-drift compensation of piezoresistive micro-machined high resolution pressure sensor

作者：Futane N P; Chowdhury S Roy; Chowdhury C Roy; Saha H^*

来源：Microelectronics Reliability, 2010, 50(2): 282-291.

DOI：10.1016/j.microrel.2009.09.012

The paper investigates the temperature-drift compensation of a high resolution piezoresistive pressure sensor using ANN based on conventional neuron model as also the inverse delayed function model of neuron. Using the delayed neuron model, an improvement in temperature-drift compensation has been obtained compared to the conventional neuron model. The CMOS analog ASIC design of a feed forward neural network using the inverse delayed function model of self connectionless neuron for the precise temperature-drift compensation has been presented. The inverse tan-sigmoid function is realized in CMOS implementation by Gilbert multiplier, differential adder and a cubing circuit. The entire design of the circuit has been done using AMS 0.35 mu m CMOS model and simulated using Mentor Graphics ELDO simulator. Using the inverse delayed function model of neuron a mean square error of the order of 10(-7) of the neural network has been obtained against a mean square error of the order of 10(-3) using conventional neuron model for the same architecture of ANN. This brings down the error from 9% for uncompensated sensor to 0.1% only for compensated sensor using the delayed model of neuron in the temperature range of 0-70 degrees C. Using conventional neuron based ANN compensation, the error is reduced to 1% error.

• 出版日期2010-2