Sources of carrier compensation in metalorganic vapor phase epitaxy-grown homoepitaxial n-type GaN layers with various doping concentrations

作者：Sawada Naoki^*; Narita Tetsuo; Kanechika Masakazu; Uesugi Tsutomu; Kachi Tetsu; Horita Masahiro; Kimoto Tsunenobu; Suda Jun^*

来源：Applied Physics Express, 2018, 11(4): 041001.

DOI：10.7567/APEX.11.041001

The source of carrier compensation in metalorganic vapor phase epitaxy (MOVPE)-grown n-type GaN was quantitatively investigated by Hall-effect measurement, deep-level transient spectroscopy, and secondary ion mass spectrometry. These analysis techniques revealed that there were at least three different compensation sources. The carrier compensation for samples with donor concentrations below 5 x 10(16) cm(-3) can be explained by residual carbon and electron trap E3 (E-c - 0.6 eV). For samples with higher donor concentrations, we found a proportional relationship between donor concentration and compensating acceptor concentration, which resulted from a third source of compensation. This is possibly due to the self-compensation effect.

• 出版日期2018-4