摘要

The relationship between the reflection phase curve and the dispersion curve of a H-shaped slot fractal uniplanar compact electromagnetic bandgap (HSF-UC-EBG) structure is investigated in this paper. It is demonstrated numerically and theoretically that the pole (located at phi = 180 degrees) of the reflection phase curve is related to the EBG location of the dispersion curve. More specifically, the pole is always located in the bandgap and the frequency shift characteristics of the pole and the EBG location are the same. Therefore, locations of the artificial magnetic conductor (AMC) and EBG can match with the AMC point and the pole, respectively. By realizing and making appropriate use of this, we can tailor the AMC and EBG locations to coincide in the frequency region only by reducing the spectral distance (d) between the AMC point and the pole. This method can improve the computational efficiency significantly. Parametric studies have been performed to obtain guidelines for reducing d. Finally, an example to design HSF-UC-EBG structure with simultaneous AMC and EBG properties by using this technique is presented with detail steps.

  • 出版日期2012
  • 单位北京邮电大学; 信息光子学与光通信国家重点实验室