Microcantilever with integrated solid-state heater, conductive tip, and Schottky diode

作者：Maniscalco Nicholas I; King William P^*

来源：Sensors and Actuators A: Physical , 2011, 168(2): 351-357.

DOI：10.1016/j.sna.2011.04.021

• Atomic force microscope (AFM)
• Schottky diode
• Electro-thermal
• Thermomechanical
• Microfabrication

This paper reports a heated atomic force microscope cantilever having a Schottky diode fabricated near the cantilever free end. The forward bias and reverse bias operation of this cantilever offer different current-voltage characteristics, such that the cantilever heating and temperature sensing capabilities are different in forward bias versus reverse bias operation. When 43 V is applied to the cantilever, the cantilever temperature is 677 degrees C in the forward bias and 786 degrees C in reverse bias. Thermal runaway for the device occurs at 445 degrees C, corresponding to forward and reverse bias resistances of 1.2 k Omega and 2.0 k Omega. Below the thermal runaway point, the cantilever temperature coefficient of resistance (TCR) is 943 ppm/degrees C in the forward bias and 2996 ppm/degrees C in reverse bias. We characterize cantilever thermomechanical bending, which is a function of bias direction, applied voltage, and actuation frequency. The diode junction at the cantilever free end grants an additional degree of electro-thermal and thermomechanical control compared to other types of heated cantilevers.

• 出版日期2011-8-10