科研之友
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摘要
The perpendicular magnetic tunnel junctions of structure Si/Ti (10 nm)/TbFeCo (22 nm)/CoFeB(2 nm)/MgO(1 nm)/CoFeB(1 nm)/TbFeCo(3 nm)/Ti (10 nm) were deposited on SiNx substrates at room temperature with various Tb contents. The samples were then annealed at different temperatures ranging from 150 to 350 degrees C. We found that the magnetic tunnel junctions with free-layer Tb content near the compensation point show largest coercivities and best squareness, and more important, best annealing endurance. The maximum magnetoresistance ratio is 4.62% for Tb content 19.7% as deposition. Annealing treatment cannot increase MR further because no crystalline MgO structures were present, even though the samples were annealed up to 350 C. c 2010 American Institute of Physics. [doi: 10.1063/1.3358593]
- 出版日期2010-5-1
