科研之友
微信
新浪微博
Facebook
分享链接
摘要
Low-energy electron irradiation causes damage in single-walled carbon nanotubes and changes the electric behavior of a nanotube field-effect transistor from metallic to semiconducting at low temperature. The irradiation damage was found to form an energy barrier of several 10 meV in the nanotube channel. We show that the transition behavior can be reasonably explained by the barrier formation and gate-induced band bending.
- 出版日期2007-2-1
