Mechanical cleaning of graphene

作者：Goossens A M; Calado V E; Barreiro A; Watanabe K; Taniguchi T; Vandersypen L M K^*

来源：Applied Physics Letters, 2012, 100(7): 073110.

DOI：10.1063/1.3685504

Contamination of graphene due to residues from nanofabrication often introduces background doping and reduces electron mobility. For samples of high electronic quality, post-lithography cleaning treatments are therefore needed. We report that mechanical cleaning based on contact mode atomic force microscopy removes residues and significantly improves the electronic properties. A mechanically cleaned dual-gated bilayer graphene transistor with hexagonal boron nitride dielectrics exhibited a mobility of similar to 36 000 cm(2)/Vs at low temperature.

• 出版日期2012-2-13