Weak-localization effect in single crystal TaN(001) films

作者：Tiwari A^*; Wang H; Kumar D; Narayan J

来源：Modern Physics Letters B, 2002, 16(28-29): 1143-1149.

DOI：10.1142/S0217984902004688

• correlated electronic system
• weak localization
• electron-electron interaction
• metal-insulator transition

We here report the manifestation of weak localization effects in the electrical resistivity of TaN(001) films grown on MgO(001) substrates by a pulsed laser deposition technique. These films were characterized by X-ray diffraction and Rutherford backscattering. High precision electrical resistivity measurements were performed on these films in the temperature range 12-300 K. A careful analysis of data showed these films to lie in the weakly localized regime with negative temperature coefficient of resistivity throughout the whole temperature range of study. A crossover from 2D localization at lower temperatures to 3D localization at higher temperatures was observed.

• 出版日期2002-12-20