Antimony Diffusion in CdTe

作者：Colegrove Eric^*; Harvey Steven P; Yang Ji Hui; Burst James M; Duenow Joel N; Albin David S; Wei Su Huai; Metzger Wyatt K

来源：IEEE Journal of Photovoltaics, 2017, 7(3): 870-873.

DOI：10.1109/JPHOTOV.2017.2655033

• Antimony
• density functional theory
• diffusion processes
• grain boundaries
• II-VI semiconductor materials

Group V dopants may be used for next-generation high-voltage cadmium telluride (CdTe) solar photovoltaics, but fundamental defect energetics and kinetics need to be understood. Here, antimony (Sb) diffusion is studied in single-crystal and polycrystalline CdTe under Cd-rich conditions. Diffusion profiles are determined by dynamic secondary ion mass spectroscopy and analyzed with analytical bulk and grain-boundary diffusion models. Slow bulk and fast grain-boundary diffusion are found. Density functional theory is used to understand formation energy and mechanisms. The theory and experimental results create new understanding of group V defect kinetics in CdTe.

• 出版日期2017-5
• 单位北京计算科学研究中心