Phosphorus- and boron-doped hydrogenated amorphous silicon films prepared using vaporized liquid cyclopentasilane

作者：Masuda Takashi^*; Takagishi Hideyuki; Shen Zhongrong; Ohdaira Keisuke; Shimoda Tatsuya

来源：Thin Solid Films, 2015, 589: 221-226.

DOI：10.1016/j.tsf.2015.05.040

• CPS
• Cyclopentasilane
• Polysilane
• Amorphous silicon
• Solar cell

A simple, inexpensive method for fabricating a hydrogenated amorphous silicon (a-Si: H) film using thermal chemical vapor deposition from cyclopentasilane (CPS) at atmospheric pressure with a substrate temperature of 370 degrees C is described. The reactant gas was generated from liquid CPS by vaporization in the deposition chamber. The vaporized CPS gas was transformed immediately into a-Si: H film on a heated substrate. The a-Si: H films could be doped either n- or p-type by dissolving appropriate amounts of white phosphorus or decaborane, respectively, in the liquid CPS before vaporization. This process allows deposition of doped a-Si: H films of photovoltaic device-quality without the need for handling, storage, or transportation of large amounts of gaseous reactants.

• 出版日期2015-8-31