摘要

The study of porous silicon (PS) structures is important for the fundamental understanding of these nanostructures and their potential applications. Here, we present a qualitative analysis of the response kinetics of a capacitive PS sensor to different organic vapors. The large surface area of PS obtained by electrochemically etching a silicon wafer has been exploited to study its sensing behavior and to explore the possibilities of a simple and cost-effective sensor for selective gas analysis. The results provide some interesting observations, which may be helpful in understanding the character of PS-based sensors.

  • 出版日期2013-1-1

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