Accurate Surface-to-Bulk Feature Alignment and Feature Size Preservation During Double-Sided Wafer Processing Using C4F8 Plasma Polymer for the Fabrication of Electrostatically Actuated Cantilever Devices

作者：Rana Sunil^*; Gregoratto Ivano; Ortiz Pedro M; Harris Alun James; Burdess James S; McNeil Calum J

来源：Journal of Microelectromechanical Systems, 2010, 19(4): 871-877.

DOI：10.1109/JMEMS.2010.2050678

• Atomic force microscopy
• cantilever
• deep reactive ion etching (DRIE)
• passivation

An accurate alignment of surface-to-bulk features (within +/- 2 mu m) during a double-sided silicon wafer processing can be extremely difficult. This is due to a combination of mask misalignment errors and unreliability of bulk etching techniques in translating the bulk feature shapes down to the surface side. In this paper, we present a fabrication process for an electrostatically actuated cantilever device where an accurate surface-to-bulk feature alignment is imperative to the operation of the device. The fabrication process compensates for the bulk etch-induced feature size variation and mask misalignment errors using a combination of self-aligning features and C4F8 plasma polymer passivation. [2009-0226]

• 出版日期2010-8