A Novel Hybrid Poly-Si Nanowire LDMOS With Extended Drift

作者：Tsai Jhen Yu^*; Hu Hsin Hui; Wu Yung Chun; Jhan Yi Rue; Chen Kun Ming; Huang Guo Wei

来源：IEEE Electron Device Letters, 2014, 35(3): 366-368.

DOI：10.1109/LED.2014.2299811

• High-voltage TFT (HVTFT)
• lateral diffused MOS (LDMOS)
• polycrystalline silicon thin-film transistors (poly-Si TFTs)
• nanowire (NW)

A novel hybrid multiple nanowire (NW) channels lateral diffused MOS (LDMOS) with extended drift, which combines the advantages of high breakdown voltage, low specific on-resistance, and superior electrical characteristics is presented. This hybrid NW LDMOS based on polycrystalline silicon thin-film transistor exhibits a high ON/OFF ratio (>10(4)), a low subthreshold slope of 192.6 mV/decade, a high breakdown voltage of 272.6 V, and low specific on-resistance of 161.8 m Omega-cm(2).

• 出版日期2014-3
• 单位清华大学