A Prefetching Scheme for Improving the Web Page Loading Time with NVRAM

作者:Hong Seungkyu; Kim Kyusik; Kim Taeseok*
来源:Journal of Semiconductor Technology and Science, 2018, 18(1): 20-28.
DOI:10.5573/JSTS.2018.18.1.020

摘要

How to effectively make use of NVRAM in computing devices is still an open problem. In this paper, we present a practical scheme that reduces the user latency, specially the page loading time in browser by using NVRAM. We first employ two-level caching architecture that uses the fast data access speed of NVRAM, and then propose a prefetching scheme that exploits the non-volatility and the byte-addressability of NVRAM. Unlike other existing prefetching schemes that consider only the prefetching accuracy, our prefetching predicts web pages to be visited next time in terms of the user latency. To this end, we maintain a graph that represents page loading time of web page and access pattern of user in NVRAM. The predicted web pages are processed in the background by using hidden tab of browsers while user reads a web page. Through implementation on open-source web browser QT-webkit, we demonstrate that our scheme improves average page loading time by up to 40%.

  • 出版日期2018-2