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摘要
A high-voltage lateral double-diffused MOSFET with N-island (NIS) and step-doped drift (SDD) region in partial silicon-on-insulator (PSOI) technology is proposed. In the lateral direction, the SDD region and the NIS on the buried oxide layer (BOX) introduce two additional electric field peaks, which can improve the surface field distribution and breakdown voltage (BV). In the vertical direction, due to the highly doped NIS, a higher electric field is induced into the BOX layer, which can achieve a higher vertical BV. As a consequence, the BV is enhanced significantly. Moreover, the NIS with a larger doping concentration can provide a higher current of the proposed device, and thus, the ON-resistance (R-ON) is reduced. The 2-D simulation results show that the BV of the proposed structure can achieve 680 V, and R-ON is reduced by 10.2% and 14.7% in comparison with the conventional PSOI and buried n-type layer PSOI, respectively.
