Low-threshold InAs-based interband cascade lasers operating at high temperatures

作者：Li Lu^*; Jiang Yuchao; Ye Hao; Yang Rui Q; Mishima Tetsuya D; Santos Michael B; Johnson Matthew B

来源：Applied Physics Letters, 2015, 106(25): 251102.

DOI：10.1063/1.4922995

InAs-based interband cascade (IC) lasers with improved optical confinement have achieved high-temperature operation with a threshold current density as low as 247 A/cm(2) at 300K for emission near 4.6 mu m. The threshold current density is the lowest ever reported among semiconductor mid-infrared lasers at similar wavelengths. These InAs-based IC devices lased in pulsed mode at temperatures up to 377K near 5.1 mu m. Narrow-ridge devices were able to operate in continuous-wave mode at temperatures up to 308K near 4.8 mu m. The implications and prospects of these results are discussed.

• 出版日期2015-6-22