Schottky Barrier Inhomogeneities of a 4H-SiC/Ni Contact in a Surface Barrier Detector

作者：Ha Jang Ho^*; Kim Han Soo

来源：Journal of the Korean Physical Society, 2011, 58(2): 205-210.

DOI：10.3938/jkps.58.205

• Surface barrier detector
• Silicon carbide
• Schottky barrier
• Barrier inhomogeneity

The surface barrier detector (SBD) is one of the solid state detectors used to measure charged particles and gamma-rays. To suppress the dark current in detector, the surface barrier height determines detector performance. The metal-semiconductor contact of SiC/Ni exhibits barrier inhomogeneity phenomena, I(V,T) and C(V), that depend on the temperature. The barrier height obtained from the I(V) data increased from 0.97 to 1.25 V with a increasing temperature, and the value obtained from C(V) data was 1.83 V. Gaussian potential model was used in order to explain the barrier height inhomogeneity observed in a 4H-SiC/Ni Schottky n-type diode detector. This discrepancy could be explained by local inhomogeneities at the Schottky contact by considering fluctuations in the local surface potential.

• 出版日期2011-2